Domain growth in the random-field Ising model

Abstract

We study a continuum random-field model of domain growth in quenched nonequilibrium systems. We derive an equation of motion for the interfaces separating domains and find approximate solutions for the growth laws in two and three dimensions. We find what may be a dynamical mechanism for the theoretical prediction that the lower critical dimension of this model is ${d}_{1}=2$. Our theoretical predictions can be tested experimentally or by computer simulation.