Abstract
The concentrations of H, B, C, N, O, F, Na, Cl, Cr, and Ge in 42 device-grade a-Si:H samples were determined by secondary ion mass spectrometry (SIMS). B, Na, Cl, Cr, or Ce were not detected. The concentrations of C, N, and O vary by factors of up to ∼100, and depend on deposition technique, deposition system, and source gas. The annealed state defect density N ann and the saturated light-induced defect density N sat are independent of impurity content. The saturated defect density cannot originate in N, and probably not in C. Oxygen affects the dark conductivity σ d, its activation energy E a, and the ratio of photo to dark conductivity σ ph / σ d in the annealed state.
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