Abstract
DNA has been employed to either store digital information or to perform parallel molecular computing. Relatively unexplored is the ability to combine DNA-based memory and logical operations in a single platform. Here, we show a DNA tri-level cell non-volatile memory system capable of parallel random-access writing of memory and bit shifting operations. A microchip with an array of individually addressable electrodes was employed to enable random access of the memory cells using electric fields. Three segments on a DNA template molecule were used to encode three data bits. Rapid writing of data bits was enabled by electric field-induced hybridization of fluorescently labeled complementary probes and the data bits were read by fluorescence imaging. We demonstrated the rapid parallel writing and reading of 8 (23) combinations of 3-bit memory data and bit shifting operations by electric field-induced strand displacement. Our system may find potential applications in DNA-based memory and computations.
Highlights
DNA has been employed to either store digital information or to perform parallel molecular computing
We have shown a proof of concept of a DNA tri-level cell non-volatile memory (TLC-NVM) system for data storage and bit shifting operations
We used a microchip with an array of individually addressable electrodes covered under a hydrogel layer to enable rapid and selective immobilization of encoding DNA template molecules onto the individual cells by electric field-facilitated transport, and fast parallel random-access writing operations by electric fieldinduced hybridization (EFH) of fluorescently labeled bit-encoding DNA molecules
Summary
DNA has been employed to either store digital information or to perform parallel molecular computing. We show a DNA tri-level cell non-volatile memory system capable of parallel random-access writing of memory and bit shifting operations. We demonstrated the rapid parallel writing and reading of 8 [23] combinations of 3-bit memory data and bit shifting operations by electric field-induced strand displacement. We proceeded to demonstrate a tri-level cell non-volatile memory (TLC-NVM) system that is capable of parallel random-access writing of memory data by EFH and rapid optical readouts by three-channel fluorescence imaging. We demonstrated the concept of random-access writing and reading operations of a 1-bit DNA NVM system using an array of 6 × 6 individually addressable electrodes (Fig. 1b, c). Five cells with addresses of [1,2], [2,1],
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
