Abstract
The paper presents an in-depth DLTS characterization of the p-i-n structure based on the InGaAsN/GaAs triple quantum well. Three DLTS evaluation methods were used for evaluation of the measured DLTS spectra. The results of all evaluation methods are compared and discussed. One of the evaluation methods that were used is a novel numerical algorithm that was recently developed. Several material and growth defects were identified. Emission from the quantum well was also observed and identified. The parameters of the energy levels were calculated and compared. The studied InGaAsN/GaAs structure is promising candidate for the solar cell applications and the further refinement of the growth process and technology is encouraged.
Highlights
One of the very promising materials in optoelectronics is a new class of semiconductors known as dilute nitrides
DLTS (Deep Level Transient Spectroscopy) study of the p-i-n structure based on the triple quantum well InGaAsN/GaAs heterostructure is introduced in the paper
This paper summarizes the results of the in-depth study of this very interesting p-i-n structure with QW, which is promising candidate for the solar cell applications
Summary
One of the very promising materials in optoelectronics is a new class of semiconductors known as dilute nitrides These dilute nitrides with nitrogen concentrations less than 5%, are opening the door for several key technologies in the near-infrared, for optical fiber communication and solar cells applications. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows wellestablished processing techniques [1]. DLTS (Deep Level Transient Spectroscopy) study of the p-i-n structure based on the triple quantum well InGaAsN/GaAs heterostructure is introduced in the paper. This paper summarizes the results of the in-depth study of this very interesting p-i-n structure with QW (quantum well), which is promising candidate for the solar cell applications
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