Abstract
The investigation is focused on the defects in silicon p+-n-n + detectors irradiated with the 53.4 MeV 40Ar ions, which generate a nonuniform defect distribution including a heavily damaged region inside the Bragg peak. The dependences of the bulk generation current and of the capacitance on bias voltage and the spectra of radiation-induced defects demonstrate new features: a step in the current rise, a region with a practically constant capacitance, and abnormal dependence of the peak amplitudes of vacancy-related defects on fluence. The changes of the DLTS spectra are assigned to the influence of silicon properties inside the Bragg peak region acting as a highly compensated insulating layer.
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