Abstract
In this paper, deep level transient spectroscopy (DLTS) is applied to study the deep levels in tin-doped and high-energy proton irradiated n-type float-zone (FZ) silicon. The results will be compared with irradiated tin-free FZ reference material, in order to evaluate the hardening potential. It will be shown that in Sn-doped silicon (FZ:Sn), a number of additional deep levels can be observed, two of which have been identified as acceptors associated with Sn–V. Furthermore, optically active recombination centres have been probed by photoluminescence (PL) spectroscopy. The PL results confirm the reduction of electrically active radiation-defect formation in FZ:Sn. At the same time, no Sn-related optically active centres have been found so far.
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