Abstract
A novel method employing Gas Cluster Ion Beam (GCIB) bombardment during deposition of C60 is proposed for forming DLC film. This method, which offers low process temperatures and compatibility with large substrate areas, produces pure carbon films exhibiting outstanding physical characteristics. The impacts of energetic gas cluster ion result in deposition of extremely high energy densities into very localized and shallow atomic level regions of a target surface. These conditions are able to cause transformation of C60 into an ultra-hard form of carbon. Example DLC films have been deposited onto various substrates at room temperature using Ar gas cluster ions at 3 to 9 keV. Films deposited using Ar cluster ion energy of 7 keV exhibited Vickers hardness value of 50 GPa, compared with typical values of 30 GPa for DLC films prepared by other methods.
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