Abstract
Kesterite materials, with a major advantage of direct bandgap and earth abundant material,are popular for low cost and thin film solar cell applications. Despite the popularity, the material fails to achieve significant efficiency due to the emergence of defect states during the growth process. In this paper multiple approaches have been investigated focusing on implementation of Quantum Wells(QW) to enhance the performance of solar cell. QW structure are created using CZTS x Se 1−x and Cu 2 ZnSnS 4 as QW and barrier material layers respectively. The performance evaluation of the QW solar cell is also carried out with the presence of most popular donor-like defect states in a gaussian and tail distribution way. The behavior of the device is investigated in presence of broad range of QWs from 2 to 100QWs to ensure the effect of defects on rise in QWs. The worst case performance of the solar cell is obtained to be efficiency of 9.6% under a high level of defect states. A remarkable observation on the effect of increase in number of QWs and defect states on solar cell parameters solar cell are concluded.
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