Abstract

ABSTRACTAnnealing of divacancies in crystalline Si has been characterized by differential scanning and isothermal calorimetry and infrared absorption spectroscopy. Si discs of 0.1 mm thickness have been implanted with 3.4 MeV protons. Scanning calorimetry shows a relatively sharp peak centered around 425 K and a broader feature ranging from 450 to 620 K. The isothermal heat release at 620 K exhibits a single exponential rather than a bimolecular decay. As the annealing progresses, a decrease in infrared absorption at 1.8 µm is observed which is directly related to the annealing of divacancies.

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