Abstract
High-purity n-type silicon samples have been irradiated with mega-electron-volt ions ${(}^{1}$${\mathrm{H}}^{+}$, $^{4}\mathrm{He}^{2+}$, $^{16}\mathrm{O}^{4+}$, $^{32}\mathrm{S}^{7+}$, $^{79}\mathrm{Br}^{8+}$, and $^{127}\mathrm{I}^{10+}$), and the two divacancy-related acceptor levels \ensuremath{\sim}0.23 and \ensuremath{\sim}0.42 eV below the conduction band (${\mathit{E}}_{\mathit{c}}$), respectively, have been studied in detail using deep-level transient spectroscopy (DLTS). Depth concentration profiles show identical values for the two levels at shallow depths, while in the region close to the damage peak large deviations from a one-to-one proportionality are found. These deviations increase with ion dose and also hinge strongly on the density of energy deposited into elastic collisions per incoming ion. Evidence for a model of the two levels is presented and, in particular, the model invokes excited states caused by motional averaging and lattice strain associated with damaged regions.
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