Abstract
Abstractmagnified imageWe study by X‐ray nanodiffraction the statistical distribution of the two possible twinned zinc‐blende (ZB) orientations as well as the occurrence of the wurtzite structure within single GaAs nanowires (NWs) grown by molecular beam epitaxy on Si(111). A fast scanning scheme allowed to perform diffraction experiments on 160 individual NWs. We find that although on average the two ZB orientations show a similar abundance, in 90% of all NWs one ZB orientation dominates and little twinning is observed within each individual NW. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
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