Abstract
The distribution of the compensating Fe acceptor in semi-insulating (SI) InP wafers is measured in both its charge states, (Fe2+) and (Fe3+). In the wafers studied the inhomogeneities of the material are due to the inhomogeneous distribution of the activated Fe, rather than to that of the residual shallow donors. According to the data, open questions exist with regard to the absolute values of the optical cross sections sigma p and sigma n of Fe in InP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
