Abstract
Space-energy distribution of process induced traps was extracted from random telegraph noise (RTN) characterization on ozone (O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) annealed Indium-Gallium-Zinc-Oxide (IGZO) metal-oxide-metal (MOM) capacitors. It was found that, O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> anneal increases both deeper and shallower traps in IGZO all the way to conduction band edge (CB) compared to the as-deposited film, and results in higher aggregate trap density as found from low frequency noise measurement. Extracted trap distribution was benchmarked with that in as-deposited and thermal annealed films, and was found convenient to interpret low field current degradation in IGZO due to O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> anneal.
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