Abstract
Quantitative high-resolution transmission electron microscopy was applied to determine the indium and nitrogen distributions in a GaInNAs/GaAs heterostructure. Two almost identical samples grown by gas-source molecular beam epitaxy on GaAs (001) substrates were investigated. The samples contained InGaAs and GaInNAs wells with the same thickness and In concentration. According to high-resolution X-ray diffractometry the average In concentration is 27% in both samples, with an N concentration of 1.1% in the GaInNAs quantum well. The evaluation of the photoluminescence peak position of the InGaAs sample and additional photoreflectance measurements yielded an In concentration of 30%. In-concentration profiles were obtained with the composition evaluation by the lattice fringe analysis (CELFA) technique for the InGaAs well using the chemical sensitivity of the (002) reflection. The averaged In concentration in the InGaAs quantum well was determined to be (30±1)% in good agreement with the other measurement techniques. The N-concentration profiles in the GaInNAs wells were measured by the comparison of the CELFA results in the samples with and without nitrogen. The N distribution is characterised by two maxima close to the GaInNAs/GaAs interfaces. The measured N concentration in the central part of the quantum well is (2.5±1.0)%.
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