Distribution of interfacial As atoms in the electron-beam exposure and epitaxy (EBE-epitaxy) technique for growing GaAs films on CaF2/Si(111) structures

Abstract

We investigate the effect of CaF2 surface modification by electron beam (e-beam) exposure in order to clarify the growth mechanism of the EBE-epitaxy (electron-beam exposure and epitaxy) for GaAs on CaF2/Si(111) structures. It is found that As atoms of the order of one monolayer are adsorbed on the surface of CaF2 films which have been exposed to an e-beam under As impingement. The electronic structure of the As-adsorbed surface of the CaF2 film is examined by electron energy loss spectroscopy. Distribution of these interfacial As atoms is also studied using Rutherford backscattering spectroscopy with a glancing angle geometry.