Abstract
The distribution of main nitrogen defects and H1a-centers in HPHT synthetic diamond grown by temperature gradient method (system Fe-Ni-C) has been studied by FTIR-mapping technique. The IR-peak at 1450cm−1 of H1a-centers (di-nitrogen interstitials), appears only in some local areas of octahedral growth sectors where single substitutional nitrogen (C-defects) was partly aggregated into nitrogen pairs (A-defects). It was found that the disappearing of H1a-centers takes place simultaneously with the completion of C→A transformation. The observed distribution of nitrogen defects in diamonds with transition metals gives strong experimental evidence that the H1a-centers are not a by-product of nitrogen transformation, but are directly involved in the stepwise C→A nitrogen aggregation process. Prime novelty statementFor HPHT diamond crystals of Fe-Ni-C system, the distribution of H1a centers, studied by FTIR-mapping for the first time, provide a strong argument for the interstitial-related mechanism of nitrogen C→A aggregation.
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