Abstract
Band-gap narrowing due to photogeneration of dense hot electron-hole plasma in GaAs was studied. Plasma was generated by picosecond light pulses, and picosecond superluminescence was observed. In this case, the total concentration of photogenerated electron-hole pairs was experimentally proved to be the sole parameter controlling the electron distribution between Γ6 and L6 valleys and the corresponding band-gap narrowing. This was explained by the fact that the carrier temperature and concentration are correlated in the presence of superluminescence.
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