Abstract
An analysis based on numerical calculations has been done for the distribution of an electric field in GaAs diffused by chromium or iron-doped structures. First, a calculation has been carried out for the non-uniform impurity distribution using experimentally measured Fe and Cr profiles. It is shown that a ν-n-junction is formed in chromium-doped structures, and a π-n-junction is formed in iron-doped ones. A conclusion is made that these junctions are graded.
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