Abstract
The spatial distributions of dangling bonds in light-soaked and in high-temperature-annealed a-Si:H have been studied. The distribution of dangling bonds in light-soaked a-Si:H is non-uniform and the density of dangling bonds has an inverse power-law depth dependence N v( χ) = C v χ − δ , with δ being about 0.6. The distribution of dangling bonds in high-temperature-annealed a-Si:H depends on the annealing time. For short annealing times, the distribution is highly non-uniform. At sufficiently long annealing times, saturation of the dangling bond density occurs and the distribution of dangling bonds becomes uniform.
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