Abstract
The spatial distribution of below-gap states in undoped GaAs/AlGaAs quantum-well structures and their effect on the luminescence intensity has been determined by a spectroscopic measurement of two-wavelength excited photoluminescence. Tuning the photon energy of above-gap excitation revealed that these below-gap states were formed neither in the GaAs well layers nor at the GaAs/AlGaAs hetero-interface, but in the AlGaAs barrier layers. The properties of below-gap states in AlGaAs were found to be strongly dependent on growth temperature.
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