Abstract
Broadening of the 28Si, 29Si isotope distribution in the subsurface layers of Si:B single crystals under plastic deformation has been observed by secondary ion mass spectroscopy. The 28Si, 29Si profiles broaden with increasing dislocation density. Accompanying changes in the 29Si16O profile caused by plastic deformation have been found. The shift of the 29Si16O profile to the crystal bulk correlates well with the 29Si+ isotope redistribution. The uphill diffusion or dislocation movement is a possible driving force of Si and SiO redistribution, whereas selectivity of the isotopes in oxidation reaction is provided by singlet–triplet transitions in Si⋯O short living pairs.
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