Abstract
Distributed reflector (DR) lasers consisting of a first-order vertical grating and second-order Bragg reflectors with λ/4 gaps were realized by one-step epitaxy followed by electron beam lithography and CH4/H2 reactive-ion etching. The sample with the cavity length of 460 µm, stripe width of 1.6 µm and grating depth of 0.1 µm on each lateral side exhibited a threshold current of 12 mA, a differential quantum efficiency of 18% from the cleaved front facet under pulsed condition and submode suppression ratio of 36 dB at a bias current of two times the threshold.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
