Abstract
In this study, we propose a deep-learning approach to establish the lithographic model for i-line photolithography and develop an optical proximity correction (OPC) algorithm to increase the resolution limit. The applications of RETs are not only on CMOS semiconductor, but also on some metasurface which used to patterning by electron beam lithography. With the OPC algorithm, we are able to manufacture a near-infrared metalens patterning by i-line photolithography in a more efficient and less expensive way.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.