Abstract

A novel n-stage distributed amplifier architecture for high-speed optical links is reported. The circuit topology is based on specific refinements necessitated by the photoreceiver application. A three-stage (DC–40 GHz) monolithic microwave integrated circuit amplifier was manufactured in a 0.25 µm AlGaAs/GaAs pHEMT process at the UMS foundry and integrated in a photoreceiver module.

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