Abstract
We have investigated the anisotropy of Fermi surface of two-dimensional electron gas in GaAs/AlGaAs heterostructures induced by a strong parallel magnetic field. By means of a magnetic electron focusing effect, the anisotropy of the cyclotron diameter, that is, the anisotropy of the Fermi surface, is directly determined. The anisotropy of Fermi surface increases by 5–10% with increasing parallel magnetic field up to 6 T. It is found that the anisotropy is enlarged with increasing carrier density by illumination, while the anisotropy increases with decreasing carrier density by the gate voltage.
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