Abstract
The nonlinear characteristics of multiple-gate transistors are of prime importance in the performance analysis for integrated circuit low signal analog applications. In this paper we present for the first time, the nonlinearity analysis of Triple-Gate Transistor in saturation with different channel lengths, Fin Heights and Fin Widths. I-V characteristics were obtained by 3-D simulation. The moderate inversion region is included. The Integral Function Method calculated the distortion figures HD2 and HD3.
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