Abstract
The distortion analysis of nano-scale (65nm) CMOS RF amplifier is presented based on Volterra series. The first three-order Volterra kernels are computed; and compact closed-form expressions of the second-order and third-order harmonic distortion (HD) are derived. These expressions give good accuracy comparing with the simulation results, and can provide insight of the nonlinearity of nano-scale amplifier. These expressions unveil and demonstrate that the nano-scale MOSFET has distinct nonlinear characteristics. Also, distortion-aware design guidelines for nano-meter CMOS amplifier are provided throughout the paper.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
