Abstract
A new metal-organic precursor for the chemical vapor deposition of zinc oxide thin films, [Zn(C9H16NO3)2], has been synthesized and characterized by 1H and 13C NMR spectroscopy, single-crystal X-ray diffraction and thermogravimetric analysis. The asymmetric unit of the title compound consists of two mol-ecules (Z' = 2), with different zinc coordination polyhedra. In one mol-ecule, the metal atom is in a distorted trigonal-bipyramidal ZnN2O3 environment (τ5 = 0.192) with a long bond to an ether O donor atom [Zn-O = 2.727 (6) Å]. In the other, the Zn atom is in a distorted ZnN2O4 octa-hedral environment with long bonds to the ether O donors of both ligands [Zn-O = 2.514 (4) and 2.661 (4) Å; O-Zn-O = 82.46 (14)°]. The crystal structure features weak C-H⋯·O inter-actions.
Highlights
The synthesis of two thermally stable ketoiminato zinc complexes [Zn{[(CH2)xOCH3]NC(CH3) C(H)C(CH3) O}2] (1: x = 2; 2: x = 3) were reported with melting points as low as 330 K (Barreca et al, 2010; Bekermann et al, 2010a,b)
Zinc oxide is of considerable current interest in materials science because it is a semiconductor with a band gap of 3.37 eV and it possesses high electron mobility, a high exciton binding energy of 60 meV, strong room-temperature luminescence, photoelectric response, high transparency, and high photocatalytic activity (Ganesh et al, 2017; Das & Sarkar, 2017)
Our research group has demonstrated that high-quality ZnO thin films with fewer impurities can be accomplished by utilizing Zn–bis- -iminoesterate complexes (Matthews et al, 2006; Onakoya et al, 2011; Gbemigun et al, 2019)
Summary
Zinc oxide is of considerable current interest in materials science because it is a semiconductor with a band gap of 3.37 eV and it possesses high electron mobility, a high exciton binding energy of 60 meV, strong room-temperature luminescence, photoelectric response, high transparency, and high photocatalytic activity (Ganesh et al, 2017; Das & Sarkar, 2017). The synthesis of two thermally stable ketoiminato zinc complexes [Zn{[(CH2)xOCH3]NC(CH3) C(H)C(CH3) O}2] (1: x = 2; 2: x = 3) were reported with melting points as low as 330 K (Barreca et al, 2010; Bekermann et al, 2010a,b) In another case, ketoiminato zinc complexes that incorporate ether O-donor atoms have shown promise (Cosham et al, 2015). Ketoiminato zinc complexes that incorporate ether O-donor atoms have shown promise (Cosham et al, 2015) With these favorable results in mind, we decided to further explore the -enaminoalkoxyester ligand platform. Studies have shown that the organic ligand attached to the N moiety of the zinc complex has a significant effect on the level of carbon incorporated into the deposited ZnO thin film (Manzi et al, 2015), the investigation of such compounds with different substituents at the N atom is of significant interest in improving precursors for these ZnO films. The dihedral angles between the chelate planes in 1 are 71.4 (1) and 77.3 (1) for the A and B molecules, respectively
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