Abstract

Unlike c-plane nitrides, “nonpolar” nitrides, e.g., those grown in the a-plane or m-plane orientation encounter anisotropic in-plane strain due to the anisotropy in the lattice and thermal mismatch with the substrate or buffer layer. Such anisotropic strain results in a distortion of the wurtzite unit cell and creates difficulty in accurate determination of lattice parameters and solid phase group-III content (xsolid) in ternary alloys. In this paper we show that the lattice distortion is orthorhombic, and outline a relatively simple procedure for measurement of lattice parameters of nonpolar group III-nitrides epilayers from high resolution x-ray diffraction measurements. We derive an approximate expression for xsolid taking into account the anisotropic strain. We illustrate this using data for a-plane AlGaN, where we measure the lattice parameters and estimate the solid phase Al content, and also show that this method is applicable for m-plane structures as well.

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