Abstract
The density of dislocations that occur in the intrinsic (i-) layer of a pin diamond diode was estimated from two-photon excitation photoluminescence (2PPL) imaging. Results elucidated data obtained from device characteristic measurements and cathodoluminescence (CL). Generation and diffusion of free carriers for deep-level emission in the i-layer have no effect on emission images observed using the 2PPL method. Therefore, to evaluate the pin diode structure, the influence of free carrier propagation on the adjacent layer can be avoided. However, this effect cannot be ignored when using CL. These findings are expected to be important for assessing diamond device performance.
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