Distinction between amorphous and crystalline silicon by means of electron energy-loss spectroscopy

Abstract

A distinction between amorphous and crystalline silicon by means of the silicon $$\hbox {L}_{23}$$ -edges acquired by electron energy-loss spectroscopy is presented. Both the fine structures of the $$\hbox {L}_{23}$$ -edges and their threshold energies have been determined and are compared. Since the zero loss peak and the adjacent core loss edges could not be acquired simultaneously due to their strong difference in intensity, MgO was used as an external reference for the exact and absolute determination of the threshold energies. As a result, the threshold energies of amorphous silicon and crystalline silicon are identical, while the fine structures of the $$\hbox {L}_{23}$$ -edges vary significantly. Calculations of the $$\hbox {L}_{23}$$ -edges of crystalline silicon are presented in order to provide an explanation for the differences in their fine structures.