Abstract
This paper describes two-dimensionally confined carrier-injection phenomena in thin-SOI insulated-gate pn-junction devices fabricated on SIMOX substrates. At 28 K, the conductance shows step-like anomalies due to the manifestation of a two-dimensional subband system in an 8-nm-thick-SOI structure at a low gate bias. Conductance shows an oscillation-like feature at a high-gate bias because of the change in injection mode. These effects are examined by theoretical simulations based on quantum mechanics. Furthermore, the discussion addresses the prospect of a new device application, such as a surface tunnel transistor.
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