Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions

Abstract

This article reports the distinct failure mechanisms and insights on device degradation of AlGaN/GaN high electron mobility transistors (HEMTs) under electrostatic discharge (ESD) stress conditions. The role of device surface, MESA isolation, and gate Schottky junction in defining the degradation type is discovered. Premature breakdown at the MESA Schottky junction and dislocation induced failure in the active region and their consequences on ESD robustness are reported. Physical mechanisms responsible for snapback instability in transmission line pulsing (TLP) characteristics are discussed. Change in device failure from soft to hard with pulsewidth is revealed. Finally, the role of contact resistivity, surface diffusion, and channel electric field and its fringing effect at contacts are analyzed in context to ESD failure of AlGaN/GaN HEMTs. Various stages of device degradation during TLP stress are captured on-the-fly using high-resolution (HR) optical microscopy and high-speed Si charge-coupled device (CCD) detector. Postdevice failure, damaged regions are analyzed using transmission electron microscopy and scanning electron microscopy together with in situ energy-dispersive X-ray spectroscopy to probe details of failure mechanisms involved. Finally, based on the learning from this article, design guidelines for an ESD robust HEMT are proposed.