Abstract

DNA extracted from salmon has recently attracted the attention of researchers, resulting in applications of DNA in photonic and electronic devices. Porphyra-334, a type of mycosporine-like amino acids (MAAs), also plays an important role in photoprotection for a variety of marine organisms including bacteria and algae. Although MAA and DNA molecules have been intensively studied, fabrication methodology and applicability of MAA-embedded DNA complexes for physical applications have been seldom discussed due to incompatibility between biological samples and physical platform. Here, Porphyra-334 embedded DNA was investigated to understand its electrical transport property with the aid of silicon nanowire/nanoribbon field effect transistors (NW/NR FETs). Its chemical stability was determined by cyclic voltammetry upon illumination of UV light. The current of DNA-SiNW FET was enhanced by the addition of Porphyra-334 and upon illumination of UV light. Conductivities of PDNA-SiNW FET compared to SiNW FET were increased up to ∼70% at dark and ∼40% under UV light due to the presence of Porphyra-334 and excess injection of charge carriers in Porphyra-334 embedded DNA generated by absorbing UV light, respectively. The addition of Porphyra-334 in DNA-SiNR FET lowered its energy level and resulted in large threshold voltage shift towards the negative scale. In addition, its electrochemical property was studied by cyclic voltammetry and impedance spectroscopy. Porphyra-334 in DNA solution which inhibited oxidation of DNA showed relatively lower current indicating high electrochemical stability and decrease of resistance compared to pristine DNA solution based on results of impedance spectroscopy.

Highlights

  • Metabolites obtained from fungi, algae, and bacteria have attracted growing interests in the field of bionanotechnology due to their specific characteristics such as antioxidizing, antibiotic, and photo-protecting effects

  • Based on measurement of IDS-VDS, we found that photoresistivities (ρ) were proportional to the area and inversely proportional to the length of silicon nanowires (SiNWs). ρ values of SiNW Field effect transistors (FETs) (DNA-coated SiNW FET) were 6.08, 4.34 × 10-1 and DNA solutions containing Porphyra-334. (a) IDS curves as a function of VDS measured at VG = 5 V for a porphyra-embedded DNA (PDNA)-SiNW FET

  • Noticeable enhancement of IDS under UV light illumination was observed. (b) The resistivity (ρ) of SiNW, DNA-SiNW, and PDNA-SiNW FET measured at VDS = 1.0 V obtained from (a). (c) IDS graph as a function of VG measured at VDS = 0.3 V for a PDNA-silicon nanoribbons (SiNRs) FET under UV light illumination

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Summary

INTRODUCTION

Metabolites obtained from fungi, algae, and bacteria have attracted growing interests in the field of bionanotechnology due to their specific characteristics such as antioxidizing, antibiotic, and photo-protecting effects. MAAs are known for their photo-protecting property as they can absorb potentially harmful wavelengths of UV radiation without degradation. They have photostability as they can dissipate energy without generating photochemical reactions. By analyzing the conductivity of SiNW/SiNR FETs and electrochemical measurements of porphyra-embedded DNA (PDNA), distinct physical characteristics can be tuned which can lead us to construct useful devices and sensors. We measured and discussed current-voltage (I-V) characteristics of Porphyra-334 embedded DNA-coated SiNW FET (PDNA-SiNW FET) and SiNR FET (PDNA-SiNR FET) under UV light illumination and electrochemical cyclic voltammetry (CV) of DNA solution containing Porphyra-334

Preparation of porphyra-embedded DNA solution
Fabrication of PDNA-coated SiNW and SiNR FETs
Measurement of I-V characteristics
Electrochemical measurement by cyclic voltammetry
Result and discussion
Optoelectrical properties of DNA-coated SiNW and SiNR FETs
Findings
Electrochemical property of DNA in solution
CONCLUSION
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