Abstract
The dissolution kinetics of D defects in p- and n-type Czochralski silicon during high temperature annealing were investigated. The results indicate that D-defect dissolution is independent from both the density of the D defects in as-received wafers and the type of doping impurities. For annealing up to 1.08×104 s, no D-defect dissolution was observed in samples annealed at 1000 °C. Based upon the present analysis, it is concluded that D-defect dissolution occurs when the vacancy concentration retained in as-grown silicon is below the thermal equilibrium concentration of vacancies at the annealing temperature. The results suggest that the driving force for D-defect dissolution is vacancy undersaturation in the silicon matrix and not the silicon interstitial saturation.
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