Abstract
Dissolution kinetics of a chemically amplified deep ultraviolet (DUV) positive resist, which consists of tert-butoxycarbonyl (t-BOC) protected phenolic resin, benzenesulfonic acid derivative as a photoacid generator (PAG) and an additional dissolution inhibitor, has been investigated by focusing on the polymer structures (t-BOC blocking level, molecular weight and molecular weight dispersion) and photo-acid structures. Based on the analysis of the dissolution rate curve and Arrhenius plots, it was concluded that only one mechanism, namely, the penetration of tetramethylammonium hydroxide (TMAH) developer into hydrophobic t-BOC resin, rules the dissolution kinetics. It was also found that a steep slope of the dissolution rate curve is very effective for improving resolution capability. Moreover, ideal dissolution characteristics which can realize superior resolution capability, were obtained by analyzing both experimental dissolution rate and resist profile simulation.
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