Abstract
The solubility of indium in a molten CaO-SiO2-Al2O3 system was measured at 1773 K (1500 °C) to establish the dissolution mechanism of indium under a highly reducing atmosphere. The solubility of indium increases with increasing oxygen potential, whereas it decreases with increased activity of basic oxide. Therefore, a dissolution mechanism of indium can be constructed according to the following equation: $$ {\text{In}}({\text{s}}) + \frac{1}{4}{\text{O}}_{2} ({\text{g}}) = ({\text{In}}^{ + } ) + \frac{1}{2}({\text{O}}^{2 - } ) $$
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