Abstract

Emission spectra induced by electron impact on some gaseous organosilicon compounds were measured by a single photon counting technique. Vinyltrimethylsilane and vinyltrimethoxysilane showed emission bands assigned to decomposition products, CH, H, and Si atom, and trimethylsilylacetylene and Trimethyl(2-propynyloxy)silane produced C2 in addition to CH, H, and Si atom, indicating that C2 species was originated from C≡C moiety in the parent mlecules. From the comparison of the emission intensity of Si atom produced from each parent molecule, it is concluded that cleavage of Si-C bond is easier than that of Si-O bond. By mixing acrolein molecule into the organosilicon compounds, emission intensity of Si atom decreased, suggesting that acrolein molelcule interacted with the organosilicon compounds to suppress the generation of Si atom.

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