Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma

Abstract

It has been generally assumed that octafluorocyclobutane (c-C4F8) is mainly decomposed to CF2 via C2F4 in etching process plasma. However, the detailed mechanism for the dissociations is yet ambiguous. In this paper we have calculated the probable dissociation pathways by using ab initio molecular orbital method. The results show that c-C4F8 is dissociated via the first triplet excited state T1(3A2), the fourth triplet excited state T4(32E) and the fourth singlet excited state S4(12E). One of the degenerate excited states of T4 and S4 is constituted by antibonding combination of two π bonding orbital of C2F4. T1 state is constituted by antibonding combination of b1u antibonding σ orbital of C2F4. Therefore, in the case of the dissociation via S4 and T4 excited states c-C4F8 may dissociate to two C2F4, and in the case of the dissociation via T1 excited state c-C4F8 may dissociate to four CF2 radicals. It is also found that C3F5+ ion observed as the main peak in c-C4F8 process plasma is produced by electron collision with the slightly larger energy than the ionization threshold value. The main dissociation path of C2F4 is a vertical electron attachment. However, it is also found that dissociation pathways via 1B2g, 3B1u, and 3B2g excited states are very important and should not be ignored.