Abstract
Herein, the results of a systematic study on the kinetics of dissociation and formation of iron–boron (FeB) pairs in boron‐doped Czochralski silicon after phosphorus implantation gettering of iron at different temperatures are reported. The aim herein is threefold: 1) investigation of the dissociation kinetics of the FeB pairs by standardized illumination as a function of iron concentration after the gettering process; 2) study of the kinetics of their association; and 3) extraction of the characteristic parameters of these two phenomena for gettered samples, in particular the effective time constants of dissociation and association as well as the constant of material, which describes the dissociation rate well in the absence of other recombination channels.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
