Abstract
The field ionization of beryllium acceptor in molecular-beam-epitaxy-grown GaAs was investigated at low temperatures, when acoustic lattice vibrations take part in the ionization process. It has been found that acoustic phonons enhance the field ionization of beryllium, the effect being stronger the higher the lattice temperature is. Experimental results are interpreted using a hydrogenic multiphonon field-ionization model. It is shown that at $T<20 \mathrm{K}$ the acoustic-phonon-assisted acceptor--valence-band tunneling process is dominated by light mass holes and deformation-potential interaction.
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