Abstract
A mirrorless scheme for forming dissipative solitons has been proposed. It consists of a thin layer of a nonlinear medium excited by coherent laser radiation. The existence of dark dissipative solitons of the Bose-Einstein condensate of excitons in such a semiconductor film has been numerically demonstrated. The sizes of an excition soliton and required laser-radiation level are two orders of magnitude smaller than the respective quantities for the case of optical dissipative solitons.
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