Abstract
A giant magnetoresistive (GMR) head in tape-recording systems is affected by the electrostatic discharge (ESD) between the sensor and magnetic shields. Hence, Pt-doped Al2O3 was developed as a dissipative gap material to reduce the ESD current. Pt chips were sputtered on an alumina target to vary the film resistance. The decay time of a charged plate on Pt-doped Al2O3 was measured for various film thicknesses. The I-V characteristics indicated that, as the applied voltage increased, the Pt-doped Al2O3 film increased the current gradually, whereas the Al2O3 film increased the current rapidly over the breakdown voltage.
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