Abstract
Field ionization properties of shallow carbon acceptors in MBE GaAs, where thermal lattice vibrations have an effect on the hole emission rate, are presented. The excited energy levels of the carbon atom are relatively far from the ground level; therefore, it appeared possible to observe pure phonon-assisted tunnelling of a hole from a single (ground) level over a wide temperature range, from 4.2 K to 22 K. Experimental results are interpreted using a multiphonon field ionization model that takes into account the interaction of acoustic phonons with a localized centre via deformation and piezoelectric potentials. In the temperature range considered, the influence of the deformation potential is found to predominate over the piezoelectric one.
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