Abstract
This Letter reports detailed measurements of the dissipation times tau(d) of approximately 10 meV intersubband (ISB) plasmons, and of the (single-particle) transport lifetimes tau(mu), in a remotely doped 40 nm GaAs quantum well. Introduced here as the time for ISB plasmons to dissipate into other modes of the electron gas, tau(d) is deduced from the homogeneous ISB absorption linewidth, measured as a function of sheet concentration and perpendicular dc electric field. Modeling in this and the next Letter [C. A. Ullrich and G. Vignale, Phys. Rev. Lett. 87, 037402 (2001)] indicates that scattering from rough interfaces dominates tau(d), while scattering from ionized impurities dominates tau(mu).
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