Abstract
The influence of isomorphous substitution of silicon by gallium in the MFI framework on lattice crystallinity and defect sites is investigated. The Ga-ZSM-5 zeolites are characterized by XRD, n-hexane adsorption, IR, TPD of ammonia, TG–DTA, MAS NMR, and chemical analysis. The incorporation of the large gallium atom is found to be disruptive. It leads to greater lattice distortion. However, the number of lattice defects decreases with growing gallium content. The sum of lattice defects and incorporated gallium atoms is nearly unchanged. It is suggested that gallium atoms and defect sites are located at similar lattice positions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of the Chemical Society, Faraday Transactions
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
