Abstract

Abstract It is well known that more and more precise doping is needed for producing high performance's electronic components and circuits of increasingly enhanced complexity. An ion optic can be used to directly produce a localised implantation allowing to free one self from all masking techniques. The experimental set up mainly consist in a projecting lens which focuses the reduced image of a “model”, structure partially transparent to the ion beam, on the crystal to be implanted. One of the difficult points is connected with the tine control of the focusing of the ion image on the surface of the target. In order to check this focusing an “Ion Image Converter” is used as the projection lens. On the one hand the 10 keV energy positive ion beam is post accelerated to a hundred keV as it is focused on the target; on the other hand, the secondary electrons ejected from the target are accelerated and focused backwards permitting the formation of an electron image which is an enlargement of the ion figure proj...

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