Displacement deposition of gold nanoparticles and electroless deposition of nickel films on silicon-carbide (4H-SiC) wafers

Abstract

Metallisation of silicon carbide (SiC) wafers is a key technology for producing efficient power devices. Conventional autocatalytic electroless deposition cannot produce adherent metal films directly on SiC substrates. The authors applied their recently developed surface-activation process for electroless metal-film deposition on silicon wafers to SiC wafers. Gold nanoparticles were produced on 4H-SiC substrates by displacement deposition after immersing the substrates in a tetrachloroauric(III) acid solution that includes hydrofluoric acid or potassium hydroxide. The size and the particle density of the deposited gold are changed with deposition parameters such as the surface condition of the substrates, the solution composition, and the UV-light illumination. The gold nanoparticles work not only as catalysts to initiate autocatalytic electroless deposition but also as binding-points between the metal film and the SiC surface. Adherent and uniform nickel-phosphorus alloy films are produced on such SiC substrates by autocatalytic electroless deposition without any further treatments.