Abstract
Starting from Kane's model and taking into account the surface electron spin-orbit interaction, we have derived the dispersion relation and Landau levels of inversion layer subband on narrow-gap semiconductors. The capacitance-voltage spectroscopy, magnetoconductivity oscillations and cyclotron resonance spectroscopy for the p-Hg 1-x Cd x Te MIS structure sample at temperature 4.2 K have been measured. From the experimental data, the subband parameters and spin-orbit coupling intensity, which are involved in the expressions of subband dispersion relation and Landau levels, have been determined. As a result, the inversion layer electron subband dispersion relation and Landau level fan chart for HgCdTe as well as the zero field spin splitting effect, the shifting and the crossing effect of Landau levels have been described quantitatively.
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