Abstract
Optical constants of amorphous hydrogenated Si1-xGex(H) films fabricated by radio frequency sputtering have been measured for 0<or=x<or=1 at wavelengths from 0.35 mu m to 2.65 mu m using both spectrally-resolved ellipsometry and spectrophotometry. The data include measurements on the refractive index in the high absorption region. The results show that the refractive index, the extinction coefficient, the loss factor and the optical band gap vary approximately linearly with x (the content of Ge). The refractive index and the extinction coefficient are dispersive and exhibit two peaks in their spectra, one above and the other below the optical absorption edge. The first peak is attributed to interband transitions and the second peak to transitions involving localised states in the mobility gap.
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